OSAKA, Japan - Thursday, October 1st 2015 [ME NewsWire]
(BUSINESS WIRE)-- Panasonic Corporation today announced that it developed gallium nitride (GaN) diodes that can not only operate at a high current that is four times greater than that tolerated by conventional silicon carbide (SiC) diodes*1, but also operate at low voltages by virtue of their low turn-on voltage. Production of the new diodes was made possible via a newly developed hybrid structure composed of separately embedded structure comprised of a low-voltage unit and a high-current-capable unit, in preparation for high voltage conditions.
Conventional silicon (Si) diodes are limited with regard to reducing switching losses. On the other hand, diodes based on SiC, a compound that is considered as a promising next-generation power semiconductor, as well as GaN, require an increased chip area to achieve high-current operations, thus posing limitations on the reduction of switching losses and size owing to increased operating frequencies.
The newly produced GaN diodes have achieved simultaneous high-current operations and low threshold voltage, and thus can handle high currents even with a small chip area. The capacitance of the chip can therefore be reduced to achieve lower switching losses, allowing the device to operate at higher frequencies. As a result, use of GaN diodes in the voltage conversion circuits or inverter circuits of automotive or industrial equipment that requires high power can reduce system size due to high frequency operation.
This newly developed product has the following advantages.
・High-current operation: 7.6 kA/cm2 (approximately 4 times*1)
・Lower turn-on voltage: 0.8 V
・Low on-resistance (RonA): 1.3 mΩcm2 (approximately 50% reduction*1)
The diodes were created based on the following technologies.
Hybrid structure of GaN diodes with a trenched p-GaN layer:
We proposed a hybrid GaN diode with a p-type layer in which trenches are formed, and developed a processing technology that can remove a p-type layer on an n-type layer in a selective manner to achieve not only high-current operations and a low turn-on voltage but also a breakdown voltage of 1.6 kV.
Fabrication of Diodes on a low-resistance GaN substrate:
For this development, we used conductive GaN substrates with a low resistance, which have been commercially used in LEDs and semiconductor lasers and are expected to be adopted in power devices in the future, and established the technologies for the epitaxial growth and processing on a GaN substrate before forming diodes. A structure in which currents flow in the vertical direction enables a smaller chip area and lower resistance.
This work was partially supported by the Ministry of the Environment, Government of Japan.
The results of this development were presented at the 2015 International Conference on Solid State Devices and Materials , Sapporo, Japan (September, 2015).
*1 Compared to an SiC diode with a rated voltage of 1,200 V
About Panasonic
Panasonic Corporation is a worldwide leader in the development of diverse electronics technologies and solutions for customers in the consumer electronics, housing, automotive, enterprise solutions and device industries. Since its founding in 1918, the company has expanded globally and now operates 468 subsidiaries and 94 associated companies worldwide, recording consolidated net sales of 7.715 trillion yen for the year ended March 31, 2015. Committed to pursuing new value through innovation across divisional lines, the company uses its technologies to create a better life and a better world for its customers. To learn more about Panasonic: http://www.panasonic.com/global.
Photos/Multimedia Gallery Available: http://www.businesswire.com/cgi-bin/mmg.cgi?eid=51192588&lang=en
Contacts
Media Contacts:
Public Relations Department
Panasonic Corporation
Tel: +81-(0)3-3574-5664 Fax: +81-(0)3-3574-5699
Panasonic News Bureau
Tel: +81-(0)3-3542-6205 Fax: +81-(0)3-3542-9018
Permalink: http://me-newswire.net/news/15878/en
(BUSINESS WIRE)-- Panasonic Corporation today announced that it developed gallium nitride (GaN) diodes that can not only operate at a high current that is four times greater than that tolerated by conventional silicon carbide (SiC) diodes*1, but also operate at low voltages by virtue of their low turn-on voltage. Production of the new diodes was made possible via a newly developed hybrid structure composed of separately embedded structure comprised of a low-voltage unit and a high-current-capable unit, in preparation for high voltage conditions.
Conventional silicon (Si) diodes are limited with regard to reducing switching losses. On the other hand, diodes based on SiC, a compound that is considered as a promising next-generation power semiconductor, as well as GaN, require an increased chip area to achieve high-current operations, thus posing limitations on the reduction of switching losses and size owing to increased operating frequencies.
The newly produced GaN diodes have achieved simultaneous high-current operations and low threshold voltage, and thus can handle high currents even with a small chip area. The capacitance of the chip can therefore be reduced to achieve lower switching losses, allowing the device to operate at higher frequencies. As a result, use of GaN diodes in the voltage conversion circuits or inverter circuits of automotive or industrial equipment that requires high power can reduce system size due to high frequency operation.
This newly developed product has the following advantages.
・High-current operation: 7.6 kA/cm2 (approximately 4 times*1)
・Lower turn-on voltage: 0.8 V
・Low on-resistance (RonA): 1.3 mΩcm2 (approximately 50% reduction*1)
The diodes were created based on the following technologies.
Hybrid structure of GaN diodes with a trenched p-GaN layer:
We proposed a hybrid GaN diode with a p-type layer in which trenches are formed, and developed a processing technology that can remove a p-type layer on an n-type layer in a selective manner to achieve not only high-current operations and a low turn-on voltage but also a breakdown voltage of 1.6 kV.
Fabrication of Diodes on a low-resistance GaN substrate:
For this development, we used conductive GaN substrates with a low resistance, which have been commercially used in LEDs and semiconductor lasers and are expected to be adopted in power devices in the future, and established the technologies for the epitaxial growth and processing on a GaN substrate before forming diodes. A structure in which currents flow in the vertical direction enables a smaller chip area and lower resistance.
This work was partially supported by the Ministry of the Environment, Government of Japan.
The results of this development were presented at the 2015 International Conference on Solid State Devices and Materials , Sapporo, Japan (September, 2015).
*1 Compared to an SiC diode with a rated voltage of 1,200 V
About Panasonic
Panasonic Corporation is a worldwide leader in the development of diverse electronics technologies and solutions for customers in the consumer electronics, housing, automotive, enterprise solutions and device industries. Since its founding in 1918, the company has expanded globally and now operates 468 subsidiaries and 94 associated companies worldwide, recording consolidated net sales of 7.715 trillion yen for the year ended March 31, 2015. Committed to pursuing new value through innovation across divisional lines, the company uses its technologies to create a better life and a better world for its customers. To learn more about Panasonic: http://www.panasonic.com/global.
Photos/Multimedia Gallery Available: http://www.businesswire.com/cgi-bin/mmg.cgi?eid=51192588&lang=en
Contacts
Media Contacts:
Public Relations Department
Panasonic Corporation
Tel: +81-(0)3-3574-5664 Fax: +81-(0)3-3574-5699
Panasonic News Bureau
Tel: +81-(0)3-3542-6205 Fax: +81-(0)3-3542-9018
Permalink: http://me-newswire.net/news/15878/en
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